DUFFAR Thierry

 Exceptional class University Professor at Grenoble Institute of Technology, France.

Scientific Director of Grenoble Institute of Technology for Energy and Materials -member of the presidential board.

French                                    SIMAP-EPM

1340 rue de la Piscine  

BP 75

38402 St Martin d’Hères Cedex

France
Phone : +33 476 82 52 13

thierry.duffar@grenoble-inp.fr

Education

Engineer in Chemistry, Lyon, France, 1978

Master in Mineral Chemistry, Grenoble, 1980

Ph-D in Materials Science, Grenoble, 1982

Habilitation, Grenoble, 1999

Teaching

Thermodynamics, Materials science, Cristallography, Energetics …

- PHELMA, graduate school of engineering in physics, electronics and materials, Grenoble Institute of Technology, France.

- IFCEN, graduate school of nuclear engineering, Sun-Yat-Sen University, Zhuhai, China.

Bibliography

160 papers in peer-reviewed journals,

12 patents,

30 invited lectures,

Editor of one book “Crystal Growath processes based on capillarity”,

Author of 10 chapters in books on crystal growth.

Committees

International Organization of Crystal Growth, Executive Committee.

European Network of Crystal growth, Coordinator (2010-2014) and member. 

International Union of Crystallography: Committee « Crystal Growth and Characterisation of Materials » (since 1999).

Editorial committee of the journals « Crystal Research and Technology » and “J. Crystal Growth”.

Scientific committee, the Int. Conferences on Crystal Growth

Scientific committee, the European Conferences on Crystal Growth

Scientific committee, the Int. Workshops on Modeling in crystal Growth

Scientific committee, the Int. Workshops on Crystal Growth Technology

Topics of interest:  study the effect of growth parameters (thermal field, convection, growth rate, set-up…) on single crystal quality (chemical homogeneity, structural defects, residual stresses, grains and twins…).

The obtained knowledge allowed optimisation of practically all crystal growth processes, for various crystals: Bridgman (growth of CaF2 and of BGO), Czochralski (growth of  InP and of GaAs), zone melting (SiC from solution in Si), Verneuil (growth of Al2O3), shaping (also Al2O3). More recently, solidification of photovoltaic silicon.

Principal- or Co-Investigator of 9 experiments under microgravity conditions in outerspace.

Research contracts with all French companies involved in Crystal growth.